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HN1D05FE Tech Specifications

The HN1D05FE from Toshiba is a Power Diode with Forward Current 300 mA, Forward Voltage 1 V, Reverse Current 0.1 µA, Reverse Voltage 420 V, Repetitive Peak Reverse Voltage 420 V.

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Diodes - Rectifiers - Arrays
Manufacturer Toshiba
Factory Lead Time 3 Weeks
Feature High breakdown voltage
JEITA SC-107C
Description Silicon Switching Diodes
Configuration of Diode Dual Diode
Forward Current 300 mA
Reverse Current 0.1 µA
Repetitive Peak Reverse Voltage 420 V
Temperature operating range -55 to 150 Degree C
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Internal Connection Independent
Toshiba Package Name ES6
Types of Diode Silicon Diode
Technology Silicon
Forward Voltage 1 V
Reverse Voltage 420 V
Non-Repetitive Peak Forward Current 2 A
Applications High-Voltage Switching Applications
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HN1D05FE Documents

Download datasheets and manufacturer documentation for HN1D05FE

Others include   "HN1D0"   parts

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HN1D01F TOSHIBA Specialized Hot ICs 3330
HN1D01F(TE85L,F) Toshiba Semiconductor and Storage Diodes - Rectifiers - Arrays 2782
HN1D01FE TOSHIBA Specialized Hot ICs 211300
HN1D01FE T5L ,F Toshiba Semiconductor and Storage Specialized Hot ICs 211559
HN1D01FE(TE85L,F) Toshiba Semiconductor and Storage Diodes - Rectifiers - Arrays 2535
HN1D01FE(TLR3SANKF TOS Specialized Hot ICs 8000
HN1D01FU TOS Specialized Hot ICs 3407
HN1D01FU (T5L,F,T) TOSHIBA Specialized Hot ICs 89400
HN1D01FU (T5LFT) TOSHIBA Specialized Hot ICs 89400
HN1D01FU TE85L TOSHIBA Specialized Hot ICs 27456

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