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FCPF20N60TYDTU Tech Specifications

MOSFET N-CH 600V 20A TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series SuperFET™
Power Dissipation (Max) 39W (Tc)
Package / Case TO-220-3 Full Pack, Formed Leads
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-220F-3 (Y-Forming)
Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 20A (Tc) 39W (Tc) Through Hole TO-220F-3 (Y-Forming)
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