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FDB9503L-F085 Tech Specifications

MOSFET P-CH 40V 110A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Technology MOSFET (Metal Oxide)
Series Automotive, AEC-Q101, PowerTrench®
Power Dissipation (Max) 333W (Tj)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 175°C (TJ)
Manufacturer Standard Lead Time 52 Weeks
Gate Charge (Qg) (Max) @ Vgs 255nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±16V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 80A, 10V
Packaging Tape & Reel (TR)
Other Names FDB9503L_F085 FDB9503L_F085-ND
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 8320pF @ 20V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description P-Channel 40V 110A (Tc) 333W (Tj) Surface Mount D²PAK (TO-263AB)
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FDB9503L-F085 Documents

Download datasheets and manufacturer documentation for FDB9503L-F085

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