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FDP10N60NZ Tech Specifications

MOSFET N-CH 600V 10A TO-220

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series UniFET-II™
Power Dissipation (Max) 185W (Tc)
Package / Case TO-220-3
Mounting Type Through Hole
Manufacturer Standard Lead Time 6 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1475pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 600V 10A (Tc) 185W (Tc) Through Hole TO-220-3
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±25V
Supplier Device Package TO-220-3
Rds On (Max) @ Id, Vgs 750 mOhm @ 5A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
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FDP10N60NZ Documents

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FDP10N60NZ brand manufacturers: AMI Semiconductor / ON Semiconductor, Bonchip stock, FDP10N60NZ reference price. FDP10N60NZ parameters, FDP10N60NZ Datasheet PDF and pin diagram description download.You can use the FDP10N60NZ Pluggable Connectors, DSP Datesheet PDF, find FDP10N60NZ pin diagram and circuit diagram and usage method of function, FDP10N60NZ electronics tutorials.You can download from the Bonchip.
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