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FJN3315RBU Tech Specifications

TRANS PREBIAS NPN 300MW TO92-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type NPN - Pre-Biased
Resistor - Emitter Base (R2) 10 kOhms
Power - Max 300mW
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Supplier Device Package TO-92-3
Resistor - Base (R1) 2.2 kOhms
Packaging Bulk
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
Current - Collector Cutoff (Max) 100nA (ICBO)
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FJN3315RBU Documents

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