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FJN4301RBU Tech Specifications

TRANS PREBIAS PNP 300MW TO92-3

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Resistor - Emitter Base (R2) 4.7 kOhms
Power - Max 300mW
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Frequency - Transition 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Supplier Device Package TO-92-3
Resistor - Base (R1) 4.7 kOhms
Packaging Bulk
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3
Current - Collector Cutoff (Max) 100nA (ICBO)
Base Part Number FJN4301
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FJN4301RBU Fairchild/ON Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased 2518
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FJN4301RTA Fairchild/ON Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased 2679
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FJN4302RBU AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased 2562
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FJN4302RTA AMI Semiconductor / ON Semiconductor Transistors - Bipolar (BJT) - Single, Pre-Biased 18000
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