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FQD17N08LTF Tech Specifications

MOSFET N-CH 80V 12.9A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 40W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 12.9A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-252, (D-Pak)
Rds On (Max) @ Id, Vgs 100 mOhm @ 6.45A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Detailed Description N-Channel 80V 12.9A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount TO-252, (D-Pak)
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