FQPF33N10L Tech Specifications

MOSFET N-CH 100V 18A TO-220F

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 41W (Tc)
Package / Case TO-220-3 Full Pack
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-220F
Rds On (Max) @ Id, Vgs 52 mOhm @ 9A, 10V
Packaging Tube
Other Names FQPF33N10L-ND FQPF33N10LFS
Mounting Type Through Hole
Manufacturer Standard Lead Time 5 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Detailed Description N-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-220F
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