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HGTP10N120BN Tech Specifications

IGBT 1200V 35A 298W TO220AB

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 960V, 10A, 10 Ohm, 15V
Switching Energy 320µJ (on), 800µJ (off)
Power - Max 298W
Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Td (on/off) @ 25°C 23ns/165ns
Supplier Device Package TO-220AB
Packaging Tube
Other Names HGTP10N120BN-ND HGTP10N120BNFS
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
IGBT Type NPT
Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-220AB
Current - Collector (Ic) (Max) 35A
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