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MUN5135DW1T1G Tech Specifications

TRANS 2PNP PREBIAS 0.25W SOT363

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type 2 PNP - Pre-Biased (Dual)
Resistor - Emitter Base (R2) (Ohms) 47k
Power - Max 250mW
Package / Case 6-TSSOP, SC-88, SOT-363
Frequency - Transition -
Current - Collector Cutoff (Max) 500nA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Supplier Device Package SC-88/SC70-6/SOT-363
Resistor - Base (R1) (Ohms) 2.2k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector (Ic) (Max) 100mA
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MUN5135DW1T1G Documents

Download datasheets and manufacturer documentation for MUN5135DW1T1G

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