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NTD6416ANL-1G Tech Specifications

MOSFET N-CH 100V 19A IPAK

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package I-Pak
Power Dissipation (Max) 71W (Tc)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 74 mOhm @ 19A, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
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NTD6416ANL-1G Documents

Download datasheets and manufacturer documentation for NTD6416ANL-1G

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