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MMST5551Q-7-F Tech Specifications

MMST5551Q-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case SC-70, SOT-323
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PDSO-G3
Configuration SINGLE
Transistor Application SWITCHING
Transistor Type NPN
Current - Collector Cutoff (Max) 50nA ICBO
Voltage - Collector Emitter Breakdown (Max) 160V
Transition Frequency 100MHz
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Series Automotive, AEC-Q101
Part Status Active
Number of Terminations 3
Additional Feature HIGH RELIABILITY
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power - Max 200mW
Polarity/Channel Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 300MHz
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MMST5551Q-7-F Documents

Download datasheets and manufacturer documentation for MMST5551Q-7-F

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