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SI2308DS-T1-E3 Tech Specifications
MOSFET N-CH 60V 2A SOT23-3
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
Power Dissipation (Max) | 1.25W (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
FET Type | N-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Detailed Description | N-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (TO-236) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Supplier Device Package | SOT-23-3 (TO-236) |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 2A, 10V |
Packaging | Cut Tape (CT) |
Other Names | SI2308DS-T1-E3CT SI2308DST1E3 |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | - |
SI2308DS-T1-E3 Documents
Download datasheets and manufacturer documentation for SI2308DS-T1-E3
-
Datasheets
SI2308DS-T1-E3.pdf
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SI2308DS-T1-E3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI2308DS-T1-E3 reference price. SI2308DS-T1-E3 parameters, SI2308DS-T1-E3 Datasheet PDF and pin diagram description download.You can use the SI2308DS-T1-E3 Pluggable Connectors, DSP Datesheet PDF, find SI2308DS-T1-E3 pin diagram and circuit diagram and usage method of function, SI2308DS-T1-E3 electronics tutorials.You can download from the Bonchip.
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