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SI2309DS-T1-E3 Tech Specifications
MOSFET P-CH 60V 1.25A SOT23-3
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
Power Dissipation (Max) | 1.25W (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | - |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Supplier Device Package | SOT-23-3 (TO-236) |
Rds On (Max) @ Id, Vgs | 340 mOhm @ 1.25A, 10V |
Packaging | Original-Reel® |
Other Names | SI2309DS-T1-E3DKR |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
FET Type | P-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Detailed Description | P-Channel 60V 1.25W (Ta) Surface Mount SOT-23-3 (TO-236) |
SI2309DS-T1-E3 Documents
Download datasheets and manufacturer documentation for SI2309DS-T1-E3
-
Datasheets
SI2309DS-T1-E3.pdf
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SI2309DS-T1-E3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI2309DS-T1-E3 reference price. SI2309DS-T1-E3 parameters, SI2309DS-T1-E3 Datasheet PDF and pin diagram description download.You can use the SI2309DS-T1-E3 Pluggable Connectors, DSP Datesheet PDF, find SI2309DS-T1-E3 pin diagram and circuit diagram and usage method of function, SI2309DS-T1-E3 electronics tutorials.You can download from the Bonchip.
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