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SI3585DV-T1-GE3 Tech Specifications

MOSFET N/P-CH 20V 2A 6-TSOP

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 600mV @ 250µA (Min)
Series TrenchFET®
Power - Max 830mW
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds -
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A, 1.5A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Packaging Cut Tape (CT)
Other Names SI3585DV-T1-GE3CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
FET Feature Logic Level Gate
Detailed Description Mosfet Array N and P-Channel 20V 2A, 1.5A 830mW Surface Mount 6-TSOP
Base Part Number SI3585
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SI3585DV-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI3585DV-T1-GE3

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