SI3805DV-T1-GE3 Tech Specifications

MOSFET P-CH 20V 3.3A 6-TSOP

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series LITTLE FOOT®
Power Dissipation (Max) 1.1W (Ta), 1.4W (Tc)
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 10V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Detailed Description P-Channel 20V 3.3A (Tc) 1.1W (Ta), 1.4W (Tc) Surface Mount 6-TSOP
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±12V
Supplier Device Package 6-TSOP
Rds On (Max) @ Id, Vgs 84 mOhm @ 3A, 10V
Packaging Cut Tape (CT)
Other Names SI3805DV-T1-GE3CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
FET Feature Schottky Diode (Isolated)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
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SI3805DV-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI3805DV-T1-GE3

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