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SI4435FDY-T1-GE3 Tech Specifications
MOSFET P-CH 30V 12.6A 8SOIC
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® Gen III |
Power Dissipation (Max) | 4.8W (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12.6A (Tc) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Supplier Device Package | 8-SOIC |
Rds On (Max) @ Id, Vgs | 19 mOhm @ 9A, 10V |
Packaging | Cut Tape (CT) |
Other Names | SI4435FDY-T1-GE3CT |
Mounting Type | Surface Mount |
Manufacturer Standard Lead Time | 32 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
FET Type | P-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Detailed Description | P-Channel 30V 12.6A (Tc) 4.8W (Tc) Surface Mount 8-SOIC |
SI4435FDY-T1-GE3 Documents
Download datasheets and manufacturer documentation for SI4435FDY-T1-GE3
-
Datasheets
SI4435FDY-T1-GE3.pdf
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SI4435FDY-T1-GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI4435FDY-T1-GE3 reference price. SI4435FDY-T1-GE3 parameters, SI4435FDY-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SI4435FDY-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SI4435FDY-T1-GE3 pin diagram and circuit diagram and usage method of function, SI4435FDY-T1-GE3 electronics tutorials.You can download from the Bonchip.
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