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SI4436DY-T1-GE3 Tech Specifications

MOSFET N-CH 60V 8A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 36 mOhm @ 4.6A, 10V
Packaging Tape & Reel (TR)
Other Names SI4436DY-T1-GE3TR SI4436DYT1GE3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 33 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 30V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
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