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SI4686DY-T1-E3 Tech Specifications
MOSFET N-CH 30V 18.2A 8-SOIC
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
Power Dissipation (Max) | 3W (Ta), 5.2W (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 15V |
FET Type | N-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Detailed Description | N-Channel 30V 18.2A (Tc) 3W (Ta), 5.2W (Tc) Surface Mount 8-SO |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Supplier Device Package | 8-SO |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 13.8A, 10V |
Packaging | Tape & Reel (TR) |
Other Names | SI4686DY-T1-E3TR SI4686DYT1E3 |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 18.2A (Tc) |
SI4686DY-T1-E3 Documents
Download datasheets and manufacturer documentation for SI4686DY-T1-E3
-
Datasheets
SI4686DY-T1-E3.pdf
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SI4686DY-T1-E3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI4686DY-T1-E3 reference price. SI4686DY-T1-E3 parameters, SI4686DY-T1-E3 Datasheet PDF and pin diagram description download.You can use the SI4686DY-T1-E3 Pluggable Connectors, DSP Datesheet PDF, find SI4686DY-T1-E3 pin diagram and circuit diagram and usage method of function, SI4686DY-T1-E3 electronics tutorials.You can download from the Bonchip.
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