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SI4829DY-T1-GE3 Tech Specifications
MOSFET P-CH 20V 2A 8-SOIC
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | LITTLE FOOT® |
Power Dissipation (Max) | 2W (Ta), 3.1W (Tc) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
FET Feature | Schottky Diode (Isolated) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±12V |
Supplier Device Package | 8-SO |
Rds On (Max) @ Id, Vgs | 215 mOhm @ 2.5A, 4.5V |
Packaging | Tape & Reel (TR) |
Other Names | SI4829DY-T1-GE3TR SI4829DYT1GE3 |
Mounting Type | Surface Mount |
Manufacturer Standard Lead Time | 21 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 10V |
FET Type | P-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Detailed Description | P-Channel 20V 2A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount 8-SO |
SI4829DY-T1-GE3 Documents
Download datasheets and manufacturer documentation for SI4829DY-T1-GE3
-
Datasheets
SI4829DY-T1-GE3.pdf
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SI4829DY-T1-GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI4829DY-T1-GE3 reference price. SI4829DY-T1-GE3 parameters, SI4829DY-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SI4829DY-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SI4829DY-T1-GE3 pin diagram and circuit diagram and usage method of function, SI4829DY-T1-GE3 electronics tutorials.You can download from the Bonchip.
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