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SI4943CDY-T1-GE3 Tech Specifications

MOSFET 2P-CH 20V 8A 8-SOIC

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®
Power - Max 3.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature -50°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1945pF @ 10V
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 8A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 19.2 mOhm @ 8.3A, 10V
Packaging Original-Reel®
Other Names SI4943CDY-T1-GE3DKR
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
FET Feature Logic Level Gate
Detailed Description Mosfet Array 2 P-Channel (Dual) 20V 8A 3.1W Surface Mount 8-SO
Base Part Number SI4943
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