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SI8461DB-T2-E1 Tech Specifications
MOSFET P-CH 20V MICROFOOT
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) |
Package / Case | 4-XFBGA, CSPBGA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 10V |
FET Type | P-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Detailed Description | P-Channel 20V 780mW (Ta), 1.8W (Tc) Surface Mount 4-Microfoot |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±8V |
Supplier Device Package | 4-Microfoot |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 1.5A, 4.5V |
Packaging | Tape & Reel (TR) |
Other Names | SI8461DB-T2-E1TR SI8461DBT2E1 |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 8V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | - |
SI8461DB-T2-E1 Documents
Download datasheets and manufacturer documentation for SI8461DB-T2-E1
-
Datasheets
SI8461DB-T2-E1.pdf
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SI8461DB-T2-E1 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SI8461DB-T2-E1 reference price. SI8461DB-T2-E1 parameters, SI8461DB-T2-E1 Datasheet PDF and pin diagram description download.You can use the SI8461DB-T2-E1 Pluggable Connectors, DSP Datesheet PDF, find SI8461DB-T2-E1 pin diagram and circuit diagram and usage method of function, SI8461DB-T2-E1 electronics tutorials.You can download from the Bonchip.
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