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SIS606BDN-T1-GE3 Tech Specifications
MOSFET N-CHAN 100V POWERPAK 1212
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Technology | MOSFET (Metal Oxide) |
Series | TrenchFET® Gen IV |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
Package / Case | PowerPAK® 1212-8 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
FET Feature | - |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 35.3A (Tc) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Vgs (Max) | ±20V |
Supplier Device Package | PowerPAK® 1212-8 |
Rds On (Max) @ Id, Vgs | 17.4 mOhm @ 10A, 10V |
Packaging | Tape & Reel (TR) |
Other Names | SIS606BDN-T1-GE3TR |
Mounting Type | Surface Mount |
Manufacturer Standard Lead Time | 32 Weeks |
Input Capacitance (Ciss) (Max) @ Vds | 1470pF @ 50V |
FET Type | N-Channel |
Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
Detailed Description | N-Channel 100V 9.4A (Ta), 35.3A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8 |
SIS606BDN-T1-GE3 Documents
Download datasheets and manufacturer documentation for SIS606BDN-T1-GE3
-
Datasheets
SIS606BDN-T1-GE3.pdf
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SIS606BDN-T1-GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SIS606BDN-T1-GE3 reference price. SIS606BDN-T1-GE3 parameters, SIS606BDN-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SIS606BDN-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIS606BDN-T1-GE3 pin diagram and circuit diagram and usage method of function, SIS606BDN-T1-GE3 electronics tutorials.You can download from the Bonchip.
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