SQJB80EP-T1_GE3 Tech Specifications

MOSFET 2 N-CH 80V POWERPAK SO8

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.5V @ 250µA
Series Automotive, AEC-Q101, TrenchFET®
Power - Max 48W
Package / Case PowerPAK® SO-8 Dual
Operating Temperature -55°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package PowerPAK® SO-8 Dual
Rds On (Max) @ Id, Vgs 19 mOhm @ 8A, 10V
Packaging Cut Tape (CT)
Other Names SQJB80EP-T1_GE3CT
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual) 80V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
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SQJB80EP-T1_GE3 Documents

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SQJB80EP-T1_GE3 Vishay / Siliconix Transistors - FETs, MOSFETs - Arrays 2684
SQJB80EP-T1_GE3 Vishay Siliconix MOSFETs Transistors Arrays

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