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SQS966ENW-T1_GE3 Tech Specifications
MOSFET N-CHAN 60V
Product Attribute | Attribute Value |
---|---|
Category | Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays |
Manufacturer | Electro-Films (EFI) / Vishay |
Factory Lead Time | 3 Weeks |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Series | Automotive, AEC-Q101, TrenchFET® |
Power - Max | 27.8W (Tc) |
Package / Case | PowerPAK® 1212-8W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds | 572pF @ 25V |
FET Type | 2 N-Channel (Dual) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Product Attribute | Attribute Value |
---|---|
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Pbfree Code | yes |
Supplier Device Package | PowerPAK® 1212-8W |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 1.25A, 10V |
Packaging | Original-Reel® |
Other Names | SQS966ENW-T1_GE3DKR |
Mounting Type | Surface Mount |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 10V |
FET Feature | Standard |
Detailed Description | Mosfet Array 2 N-Channel (Dual) 60V 6A (Tc) 27.8W (Tc) Surface Mount PowerPAK® 1212-8W |
SQS966ENW-T1_GE3 Documents
Download datasheets and manufacturer documentation for SQS966ENW-T1_GE3
-
Datasheets
SQS966ENW-T1_GE3.pdf
Others include "SQS96" parts
The following parts include 'SQS96'
Part # | Manufacturer | Category | Availability |
---|---|---|---|
SQS966ENW-T1_GE3 | Vishay Siliconix | MOSFETs Transistors Arrays |
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SQS966ENW-T1_GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SQS966ENW-T1_GE3 reference price. SQS966ENW-T1_GE3 parameters, SQS966ENW-T1_GE3 Datasheet PDF and pin diagram description download.You can use the SQS966ENW-T1_GE3 Pluggable Connectors, DSP Datesheet PDF, find SQS966ENW-T1_GE3 pin diagram and circuit diagram and usage method of function, SQS966ENW-T1_GE3 electronics tutorials.You can download from the Bonchip.
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