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FQB34P10TM Tech Specifications

MOSFET P-CH 100V 33.5A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild/ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 3.75W (Ta), 155W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±25V
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 60 mOhm @ 16.75A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 25V
FET Type P-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 33.5A (Tc)
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