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FQD19N10LTM Tech Specifications

MOSFET N-CH 100V 15.6A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Fairchild/ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 18nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package D-Pak
Rds On (Max) @ Id, Vgs 100 mOhm @ 7.8A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 870pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Current - Continuous Drain (Id) @ 25°C 15.6A (Tc)
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FQD19N10LTM Documents

Download datasheets and manufacturer documentation for FQD19N10LTM

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