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GP1M009A090N Tech Specifications

MOSFET N-CH 900V 9.5A TO3PN

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-3PN
Power Dissipation (Max) 312W (Tc)
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 4.75A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2324pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 900V
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GP1M009A090N brand manufacturers: Global Power Technologies Group, Bonchip stock, GP1M009A090N reference price. GP1M009A090N parameters, GP1M009A090N Datasheet PDF and pin diagram description download.You can use the GP1M009A090N Pluggable Connectors, DSP Datesheet PDF, find GP1M009A090N pin diagram and circuit diagram and usage method of function, GP1M009A090N electronics tutorials.You can download from the Bonchip.
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