GP2M010A060F Tech Specifications

MOSFET N-CH 600V 10A TO220F

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220F
Power Dissipation (Max) 52W (Tc)
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 700 mOhm @ 5A, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1660pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 600V
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