GPA030A135MN-FDR Tech Specifications

IGBT 1350V 60A 329W TO3PN

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - IGBTs - Single
Manufacturer Global Power Technologies Group
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1350V
Test Condition 600V, 30A, 5 Ohm, 15V
Switching Energy 4.4mJ (on), 1.18mJ (off)
Reverse Recovery Time (trr) 450ns
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Gate Charge 300nC
Current - Collector (Ic) (Max) 60A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 30A
Td (on/off) @ 25°C 30ns/145ns
Supplier Device Package TO-3PN
Power - Max 329W
Package / Case TO-3
Mounting Type Through Hole
IGBT Type Trench Field Stop
Current - Collector Pulsed (Icm) 90A
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GPA030A135MN-FDR Documents

Download datasheets and manufacturer documentation for GPA030A135MN-FDR

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