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IXFT12N100F Tech Specifications

MOSFET N-CH 1KV 12A TO268

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5.5V @ 4mA
Technology MOSFET (Metal Oxide)
Series HiPerRF™
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-268 (IXFT)
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 6A, 10V
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 77nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 1000V (1kV)
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IXFT12N100F Documents

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IXFT12N100F brand manufacturers: IXYS Corporation, Bonchip stock, IXFT12N100F reference price. IXFT12N100F parameters, IXFT12N100F Datasheet PDF and pin diagram description download.You can use the IXFT12N100F Pluggable Connectors, DSP Datesheet PDF, find IXFT12N100F pin diagram and circuit diagram and usage method of function, IXFT12N100F electronics tutorials.You can download from the Bonchip.
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