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IXFT9N80Q Tech Specifications

MOSFET N-CH 800V 9A TO-268

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 2.5mA
Supplier Device Package TO-268
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 500mA, 10V
Packaging Bulk
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 800V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series HiPerFET™
Power Dissipation (Max) 180W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
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IXFT9N80Q Documents

Download datasheets and manufacturer documentation for IXFT9N80Q

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