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IXTF1R4N450 Tech Specifications

2500V TO 4500V VERY HI VOLT PWR

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 6V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 40 Ohm @ 50mA, 10V
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package ISOPLUS i4-PAC™
Power Dissipation (Max) 190W (Tc)
Package / Case i4-Pac™-5 (3 leads)
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 4500V (4.5kV)
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IXTF1R4N450 Documents

Download datasheets and manufacturer documentation for IXTF1R4N450

Others include   "IXTF1"   parts

The following parts include  'IXTF1' 

Part # Manufacturer Category Availability
IXTF1N400 IXYS Corporation Transistors - FETs, MOSFETs - Single 2517
IXTF1N450 IXYS Corporation Transistors - FETs, MOSFETs - Single 2687

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