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IXTQ170N10P Tech Specifications

MOSFET N-CH 100V 170A TO-3P

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-3P
Rds On (Max) @ Id, Vgs 9 mOhm @ 500mA, 10V
Packaging Tube
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series Polar™
Power Dissipation (Max) 715W (Tc)
Package / Case TO-3P-3, SC-65-3
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 198nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
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IXTQ170N10P Documents

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