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IXTT2N300P3HV Tech Specifications

2000V TO 3000V POLAR3 POWER MOSF

Product Attribute Attribute Value
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Manufacturer IXYS Corporation
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 21 Ohm @ 1A, 10V
Packaging Tube
Operating Temperature -55°C ~ 155°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-268
Power Dissipation (Max) 520W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 73nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 3000V (3kV)
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IXTT2N300P3HV Documents

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