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AUIRF2903Z Tech Specifications

MOSFET N-CH 30V 260A TO-220AB

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Element Configuration Single
Power Dissipation 290W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 160A Tc
Rise Time 100ns
Vgs (Max) ±20V
Turn-Off Delay Time 48 ns
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 2 V
Length 10.66mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
Part Status Active
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 290W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.4m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds 6320pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 37 ns
Continuous Drain Current (ID) 160A
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.0024Ohm
Avalanche Energy Rating (Eas) 820 mJ
Height 16.51mm
Width 4.82mm
REACH SVHC No SVHC
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