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AUIRF7316Q Tech Specifications

MOSFET 2P-CH 30V 4.9A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / MOSFETs Transistors Arrays
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 58m Ω @ 4.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Drain to Source Voltage (Vdss) 30V
Drain-source On Resistance-Max 0.058Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G8
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
JEDEC-95 Code MS-012AA
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 140 mJ
FET Feature Logic Level Gate
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