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AUIRF7478QTR Tech Specifications

MOSFET N-CH 60V 7A 8SOIC

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mounting Type Surface Mount
Number of Pins 8
Packaging Tape & Reel (TR)
Series HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 26MOhm
Technology MOSFET (Metal Oxide)
Configuration Single
Power Dissipation 2.5W
FET Type N-Channel
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 7A Ta
Rise Time 2.6ns
Vgs (Max) ±20V
Turn-Off Delay Time 44 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Length 5mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Operating Temperature -55°C~150°C TJ
Published 2012
Part Status Obsolete
ECCN Code EAR99
Subcategory FET General Purpose Power
Number of Elements 1
Power Dissipation-Max 2.5W Ta
Turn On Delay Time 7.7 ns
Rds On (Max) @ Id, Vgs 26m Ω @ 4.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1740pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 31nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 13 ns
Continuous Drain Current (ID) 7A
Drain Current-Max (Abs) (ID) 7A
Height 1.5mm
Width 4mm
RoHS Status ROHS3 Compliant
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