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AUIRFR2407TRL Tech Specifications

Trans MOSFET N-CH 75V 42A 3-Pin(2+Tab) DPAK T/R

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2015
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 110W Tc
Power Dissipation 110W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 90ns
Turn-Off Delay Time 65 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.026Ohm
Pulsed Drain Current-Max (IDM) 170A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Fall Time (Typ) 66 ns
Continuous Drain Current (ID) 42A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Radiation Hardening No
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