AUIRFR5410 Tech Specifications

AUIRFR5410 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 66W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 205m Ω @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Drain to Source Voltage (Vdss) 100V
Vgs (Max) ±20V
Turn-Off Delay Time 45 ns
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -100V
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 66W
Turn On Delay Time 15 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 13A Tc
Rise Time 58ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 46 ns
Continuous Drain Current (ID) 13A
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.205Ohm
Pulsed Drain Current-Max (IDM) 52A
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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