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AUIRFS3107-7P Tech Specifications

MOSFET N-CH 75V 230A D2PAK-7P

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
JESD-30 Code R-PSSO-G6
Power Dissipation-Max 370W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.6m Ω @ 160A, 10V
Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 64 ns
Continuous Drain Current (ID) 240A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 75V
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 6
Additional Feature ULTRA LOW RESISTANCE
Terminal Form GULL WING
Number of Elements 1
Element Configuration Single
Power Dissipation 370W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 240A Tc
Rise Time 80ns
Vgs (Max) ±20V
Turn-Off Delay Time 100 ns
JEDEC-95 Code TO-263CB
Drain-source On Resistance-Max 0.0026Ohm
Avalanche Energy Rating (Eas) 320 mJ
Length 10.67mm
Radiation Hardening No
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