AUIRFS4410Z Tech Specifications

AUIRFS4410Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) 260
Base Part Number IRFS4410
Number of Elements 1
Power Dissipation-Max 230W Tc
Power Dissipation 230W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 150μA
Current - Continuous Drain (Id) @ 25°C 97A Tc
Rise Time 52ns
Vgs (Max) ±20V
Turn-Off Delay Time 43 ns
Threshold Voltage 2V
Drain-source On Resistance-Max 0.009Ohm
Avalanche Energy Rating (Eas) 242 mJ
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9m Ω @ 58A, 10V
Input Capacitance (Ciss) (Max) @ Vds 4820pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) 97A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 2 V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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