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AUIRG4PH50S Tech Specifications

AUIRG4PH50S datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single IGBTs
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 200W
Element Configuration Single
Case Connection COLLECTOR
Polarity/Channel Type N-CHANNEL
Max Collector Current 57A
Collector Emitter Breakdown Voltage 1.2kV
Collector Emitter Saturation Voltage 1.7V
Test Condition 960V, 33A, 5 Ω, 15V
Turn Off Time-Nom (toff) 2170 ns
Current - Collector Pulsed (Icm) 114A
Switching Energy 1.8mJ (on), 19.6mJ (off)
Gate-Emitter Thr Voltage-Max 6V
Length 15.87mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Part Status Not For New Designs
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 200W
Input Type Standard
Collector Emitter Voltage (VCEO) 1.7V
JEDEC-95 Code TO-247AC
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 62 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 33A
Gate Charge 167nC
Td (on/off) @ 25°C 32ns/845ns
Gate-Emitter Voltage-Max 20V
Height 20.7mm
Width 5.3086mm
REACH SVHC No SVHC
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AUIRG4PH50S Documents

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