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AUIRL3705ZS Tech Specifications

MOSFET N-CH 55V 75A D2PAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 130W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8m Ω @ 52A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 83 ns
Continuous Drain Current (ID) 75A
Drain to Source Breakdown Voltage 55V
Length 10.67mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 2
Resistance 8MOhm
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Turn On Delay Time 17 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 75A Tc
Rise Time 240ns
Vgs (Max) ±16V
Turn-Off Delay Time 26 ns
Gate to Source Voltage (Vgs) 16V
Height 4.83mm
Width 9.65mm
REACH SVHC No SVHC
Lead Free Lead Free
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