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AUIRL7766M2TR Tech Specifications

MOSFET N-CH 100V 10A DIRECTFET

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Number of Pins 9
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Terminal Position BOTTOM
Number of Elements 1
Power Dissipation-Max 2.5W Ta 62.5W Tc
Power Dissipation 62.5W
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 150μA
Current - Continuous Drain (Id) @ 25°C 10A Ta
Rise Time 24ns
Vgs (Max) ±16V
Turn-Off Delay Time 120 ns
Threshold Voltage 2.5V
Drain Current-Max (Abs) (ID) 51A
Drain to Source Breakdown Voltage 100V
Avalanche Energy Rating (Eas) 237 mJ
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case DirectFET™ Isometric M4
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Active
Number of Terminations 5
Additional Feature HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
JESD-30 Code R-XBCC-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 10m Ω @ 31A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5305pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 66nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.01Ohm
Pulsed Drain Current-Max (IDM) 204A
Radiation Hardening No
RoHS Status ROHS3 Compliant
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