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AUIRLR2703 Tech Specifications

MOSFET N-CH 30V 20A DPAK

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 52 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 45W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 45m Ω @ 14A, 10V
Input Capacitance (Ciss) (Max) @ Vds 450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 20 ns
Continuous Drain Current (ID) 23A
JEDEC-95 Code TO-252AA
Drain Current-Max (Abs) (ID) 20A
Drain to Source Breakdown Voltage 30V
Avalanche Energy Rating (Eas) 200 mJ
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2006
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 45W
Turn On Delay Time 8.5 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 20A Tc
Rise Time 140ns
Vgs (Max) ±16V
Turn-Off Delay Time 12 ns
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.045Ohm
Pulsed Drain Current-Max (IDM) 96A
Nominal Vgs 1 V
Length 6.73mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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AUIRLR2703 Documents

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