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AUIRLU3110Z Tech Specifications

Trans MOSFET N-CH 100V 63A 3-Pin(3+Tab) IPAK Tube

Product Attribute Attribute Value
Category Discrete Semiconductors / Single MOSFETs Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mount Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Additional Feature ULTRA-LOW RESISTANCE
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 30
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 14m Ω @ 38A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3980pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 48nC @ 4.5V
Fall Time (Typ) 48 ns
Continuous Drain Current (ID) 63A
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Nominal Vgs 1 V
Length 6.73mm
Radiation Hardening No
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.5V @ 100μA
Current - Continuous Drain (Id) @ 25°C 42A Tc
Rise Time 110ns
Turn-Off Delay Time 33 ns
Threshold Voltage 1V
Drain Current-Max (Abs) (ID) 42A
Pulsed Drain Current-Max (IDM) 250A
Height 2.39mm
Width 6.22mm
REACH SVHC No SVHC
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