BAR8802LRHE6327XTSA1 Tech Specifications

BAR8802LRHE6327XTSA1 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF Diodes
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 6 Weeks
Mount Surface Mount
Number of Pins 2
Operating Temperature 150°C TJ
Published 2005
Part Status Obsolete
Number of Terminations 2
Type Switch
Additional Feature LOW DISTORTION
Voltage - Rated DC 80V
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Power Dissipation 250mW
Forward Current 100mA
Forward Voltage 1.2V
Capacitance @ Vr, F 0.4pF @ 1V 1MHz
Frequency Band L B
Diode Capacitance-Max 0.4pF
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Gold
Package / Case SOD-882
Diode Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 2.5Ohm
HTS Code 8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Form NO LEAD
Current Rating 100mA
Base Part Number BAR88
Max Current Rating 100mA
Diode Type PIN - Single
Output Current 100mA
Halogen Free Halogen Free
Reverse Recovery Time 500 ns
Reverse Voltage 80V
Resistance @ If, F 600mOhm @ 10mA 100MHz
Minority Carrier Lifetime-Nom 0.5 μs
Lead Free Lead Free
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BAR8802LRHE6327XTSA1 Documents

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