BAT62E6327HTSA1 Tech Specifications

BAT62E6327HTSA1 datasheet pdf and Diodes - RF product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / RF Diodes
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 4 Weeks
Package / Case TO-253-4, TO-253AA
Diode Element Material SILICON
Packaging Tape & Reel (TR)
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Voltage - Rated DC 40V
Current Rating 20mA
Number of Elements 2
Power Dissipation-Max 100mW
Diode Type Schottky - 2 Independent
Halogen Free Not Halogen Free
Peak Reverse Current 10μA
Capacitance @ Vr, F 0.6pF @ 0V 1MHz
Type of Schottky Barrier LOW BARRIER
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Number of Pins 4
Operating Temperature 150°C TJ
Published 2010
Part Status Active
Number of Terminations 4
Subcategory Other Diodes
Terminal Form GULL WING
Base Part Number BAT62
Max Current Rating 20mA
Element Configuration Dual
Forward Current 20mA
Forward Voltage 1V
Max Repetitive Reverse Voltage (Vrrm) 40V
Diode Capacitance-Max 0.6pF
Height 1mm
Width 1.3mm
RoHS Status ROHS3 Compliant
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BAT62E6327HTSA1 Documents

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