BC817K25E6327HTSA1 Tech Specifications

BC817K25E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Discrete Semiconductors / Single BJT Transistors
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
JESD-609 Code e3
Part Status Last Time Buy
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position DUAL
Frequency 170MHz
Pin Count 3
Element Configuration Single
Power - Max 500mW
Halogen Free Not Halogen Free
Transistor Type NPN
Max Collector Current 500mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 45V
Collector Emitter Saturation Voltage 700mV
Collector Base Voltage (VCBO) 50V
Height 900μm
Width 1.3mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2004
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 500mW
Terminal Form GULL WING
Base Part Number BC817
Number of Elements 1
Power Dissipation 330mW
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 700mV
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 170MHz
Max Breakdown Voltage 45V
Emitter Base Voltage (VEBO) 5V
Length 2.9mm
Radiation Hardening No
Lead Free Lead Free
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